Part Number | JS28F512M29EWHB |
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Manufacturer | Micron |
Quantity in stock | 176000 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | NOR Flash Parallel 3V 3.3V 512Mbit 64M 32M x 8bit 16bit 110ns 56-Pin TSOP T R |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | JS28F512M29EWHB |
Datasheet download | JS28F512M29EWHB.pdf |
Part Number | JS28F512M29EWHB |
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Lead Finish | Matte Tin |
Support of Page Mode | Yes |
Interface Type | Parallel |
Maximum Operating Supply Voltage | 3.6 V |
Timing Type | Asynchronous |
Mounting | Surface Mount |
Typical Operating Supply Voltage | 3|3.3 V |
Architecture | Sectored |
Address Bus Width | 26|25 Bit |
Cell Type | NOR |
Boot Block | Yes |
ECC Support | No |
Support of Common Flash Interface | Yes |
Page Size | 16/32 Words/Byte |
Density | 512 Mb |
Command Compatible | Yes |
Erase Suspend/Resume Modes Support | Yes |
Maximum Operating Current | 31 mA |
Program Current | 50 mA |
Programming Voltage | 11.5 to 12.5 V |
Page Read Current | 16 mA |
Sector Size | 128 x 512 KB |
Block Organization | Symmetrical |
Simultaneous Read/Write Support | No |
Minimum Operating Supply Voltage | 2.7 V |
Maximum Programming Time | 3.016/Word ms |
Number of Bits per Word | 8/16 Bit |
Number of Words | 64/32 MWords |
Supplier Package | TSOP |
Location Of Boot Block | Bottom|Top |
Maximum Erase Time | 4/Block s |
Rad Hard | No |
Maximum Page Access Time | 25 ns |
Maximum Random Access Time | 110 ns |
Product Dimensions | 14 x 18.4 x 1 mm |
Operating Temperature | -40 to 85 °C |
Max Processing Temp | 260 |
Pin Count | 56 |
OE Access Time | 25 ns |
Package | 56TSOP |
Replacement Part Number | PART-JS28F512M29EWHB |
Weight | Contact us |
Country of Origin | - |
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