Part Number | TC58NYG1S3HBAI6 |
---|---|
Manufacturer | Toshiba |
Quantity in stock | 335720 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | 2Gbit, generation: 24nm, VCC=1.7 to 1.95V |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | TC58NYG1S3HBAI6 |
Datasheet download | TC58NYG1S3HBAI6.pdf |
Part Number | TC58NYG1S3HBAI6 |
---|---|
Rad Hard | No |
Minimum Operating Supply Voltage | 1.7 V |
Operating Temperature | -40 to 85 °C |
Number of Words | 256 MWords |
Maximum Programming Time | 0.3 ms |
Page Size | 2048 byte |
Number of Bits per Word | 8 Bit |
Density | 2 Gb |
Programming Voltage | 1.7 to 1.95 V |
Maximum Random Access Time | 25 ns |
Simultaneous Read/Write Support | No |
Block Organization | Symmetrical |
Typical Operating Supply Voltage | 1.8 V |
Mounting | Surface Mount |
Support of Page Mode | No |
Supplier Package | VFBGA |
Architecture | Sectored |
Pin Count | 67 |
Maximum Operating Supply Voltage | 1.95 V |
Boot Block | No |
Screening Level | Industrial |
Sector Size | 128 x 2048 KB |
Cell Type | NAND |
Package | 67VFBGA |
Replacement Part Number | PART-TC58NYG1S3HBAI6 |
Weight | Contact us |
Country of Origin | - |
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