DR74-1R5-R

Ind Power Shielded Wirewound 1.5uH 20% 100KHz Ferrite 4.94A T R

CTX0.68-1A-R

Ind Power Wirewound 0.752uH 3.01uH 25% 100KHz Amorphous Metal 9A 4.48A T R

FP1107R2-R30-R

Ind High Current Power Wirewound 300nH 10% 100KHz Ferrite 42A T R

ASMPH-0603-1R5M-T

Ind Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 900mA 0603 T R

AISC-0402 -6N2J-T

Ind Chip Wirewound 6.2nH 5% 250MHz 23Q-Factor Ceramic 760mA 0402 T R

ATFC-0402HQ-1N5B-T

Ind Chip Thin Film 1.5nH 0.1nH 500MHz 16Q-Factor Ceramic 730mA 0402 T R

AISC-1206-R10J-T

Ind Chip Wirewound 100nH 5% 100MHz 55Q-Factor Ceramic 850mA 1206 T R

ASPI-6045S-6R8MT

Ind Power Shielded Wirewound 6.8uH 20% 100KHz 3A 2424 T R

AIMC-0201-18NJ-T

Ind Chip Unshielded Multi-Layer 18nH 5% 100MHz 5Q-Factor Ceramic 100mA 0201 T R

HK0603R10J-T

Ind High Frequency Chip Multi-Layer 100nH 5% 100MHz 4Q-Factor Ceramic 60mA 0201 T R

LG HKQ0603U5N4C-T

Ind High Frequency Chip Multi-Layer 5.4nH 0.2nH 500MHz 14Q-Factor Ceramic 315mA 0201 Paper T R

LG HKQ0603U9N4J-T

Ind High Frequency Chip Multi-Layer 9.4nH 5% 500MHz 14Q-Factor Ceramic 250mA 0201 Paper T R

B82442-A1106-J

Ind 10mH 5% 79.6KHz 30Q-Factor Ferrite 25mA 2220 Blister T R

AISC-0402-15NJ-T

Ind Chip Wirewound 15nH 5% 250MHz 26Q-Factor Ceramic 560mA 0402 T R

AISC-0402 -5N1J-T

Ind Chip Wirewound 5.1nH 5% 250MHz 23Q-Factor Ceramic 800mA 0402 T R

NCB1812D121TR050F

Ind Chip Bead 120Ohm 25% 100MHz Ferrite 500mA 1812 T R

MGV0402R22M-10

Ind Power Shielded 220nH 20% 100KHz 9A T R

HCMA0703-2R2-R

Ind Power Shielded 2.2uH 20% 100KHz Powdered Iron 8A T R

AIAC-0805C-39NK-T

Ind RF Unshielded 39nH 10% 300MHz 70Q-Factor Air 380mA T R

HCMA1305-5R6-R

Ind Power Shielded 5.6uH 20% 100KHz Powdered Iron 11.5A T R