Part Number | TC58NYG2S0HBAI4 |
---|---|
Manufacturer | Toshiba |
Quantity in stock | 522970 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | 4Gbit, generation: 24nm, VCC=1.7 to 1.95V |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | TC58NYG2S0HBAI4 |
Datasheet download | TC58NYG2S0HBAI4.pdf |
Part Number | TC58NYG2S0HBAI4 |
---|---|
Timing Type | Synchronous |
Simultaneous Read/Write Support | No |
Erase Suspend/Resume Modes Support | No |
Command Compatible | No |
Product Dimensions | 11 x 9 x 0.74(Max) |
Cell Type | NAND |
Sector Size | 256 x 2048 KB |
Operating Temperature | -40 to 85 °C |
Maximum Erase Time | 0.01/Block s |
Rad Hard | No |
Architecture | Sectored |
Number of Words | 512 MWords |
Density | 4 Gb |
Maximum Operating Supply Voltage | 1.95 V |
Block Organization | Symmetrical |
Page Size | 4352 byte |
Typical Operating Supply Voltage | 1.8 V |
Address Bus Width | 1 Bit |
Mounting | Surface Mount |
Max Processing Temp | 260 |
Pin Count | 63 |
Maximum Operating Current | 30 mA |
Interface Type | Serial |
Programming Voltage | 1.7 to 1.95 V |
Program Current | 30 mA |
Maximum Programming Time | 0.7 ms |
Support of Page Mode | No |
Minimum Operating Supply Voltage | 1.7 V |
Boot Block | No |
Screening Level | Industrial |
ECC Support | Yes |
Supplier Package | TFBGA |
Number of Bits per Word | 8 Bit |
Package | 63TFBGA |
Replacement Part Number | PART-TC58NYG2S0HBAI4 |
Weight | Contact us |
Country of Origin | - |
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