Part Number | TC58BYG0S3HBAI4 |
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Manufacturer | Toshiba |
Quantity in stock | 798020 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | 1Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | TC58BYG0S3HBAI4 |
Datasheet download | ![]() |
Part Number | TC58BYG0S3HBAI4 |
---|---|
Page Size | 2 KB |
Interface Type | Serial |
Density | 1 Gb |
Timing Type | Synchronous |
Rad Hard | No |
Product Dimensions | 11 x 9 x 0.74(Max) |
Number of Words | 128 MWords |
Operating Temperature | -40 to 85 °C |
Architecture | Sectored |
Maximum Operating Supply Voltage | 1.95 V |
Typical Operating Supply Voltage | 1.8 V |
Block Organization | Symmetrical |
Mounting | Surface Mount |
Sector Size | 128 x 1024 KB |
Pin Count | 63 |
Cell Type | SLC NAND |
Programming Voltage | 1.7 to 1.95 V |
Minimum Operating Supply Voltage | 1.7 V |
ECC Support | Yes |
Supplier Package | TFBGA |
Number of Bits per Word | 8 Bit |
Screening Level | Industrial |
Package | 63TFBGA |
Replacement Part Number | PART-TC58BYG0S3HBAI4 |
Weight | Contact us |
Country of Origin | - |
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