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| Part Number | M29W640GB70NA6E |
|---|---|
| Manufacturer | Micron |
| Quantity in stock | 136440 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Flash Mem Parallel 3V 3.3V 64M-Bit 8M x 8 4M x 16 70ns 48-Pin TSOP Tray |
| Category | Memory IC |
| Family | Flash IC |
| ROHS Compliant | Yes |
| MSL Level | M29W640GB70NA6E |
| Datasheet download |  M29W640GB70NA6E.pdf |
| Part Number | M29W640GB70NA6E |
|---|---|
| Address Bus Width | 23|22 Bit |
| Rad Hard | No |
| Command Compatible | No |
| Architecture | Sectored |
| Cell Type | NOR |
| Timing Type | Asynchronous |
| Interface Type | Parallel |
| Boot Block | Yes |
| Support of Page Mode | Yes |
| ECC Support | No |
| OE Access Time | 30 ns |
| Sector Size | 8 x 8|64 x 127 KB |
| Maximum Operating Current | 10 mA |
| Product Dimensions | 12 x 18.4 x 1 mm |
| Number of Bits per Word | 8/16 Bit |
| Maximum Random Access Time | 70 ns |
| Program Current | 20 mA |
| Location Of Boot Block | Bottom |
| Block Organization | Asymmetrical |
| Typical Operating Supply Voltage | 3|3.3 V |
| Supplier Package | TSOP |
| Density | 64 Mb |
| Erase Suspend/Resume Modes Support | Yes |
| Simultaneous Read/Write Support | No |
| Programming Voltage | 2.7 to 3.6|11.5 to 12.5 V |
| Operating Temperature | -40 to 85 °C |
| Max Processing Temp | 260 |
| Lead Finish | Matte Tin |
| Number of Words | 8 MWords |
| Page Size | 4 Words |
| Maximum Erase Time | 400/Chip s |
| Maximum Programming Time | 400000/Chip ms |
| Maximum Page Access Time | 30 ns |
| Pin Count | 48 |
| Minimum Operating Supply Voltage | 2.7 V |
| Maximum Operating Supply Voltage | 3.6 V |
| Mounting | Surface Mount |
| Screening Level | Industrial |
| Package | 48TSOP |
| Replacement Part Number | PART-M29W640GB70NA6E |
| Weight | Contact us |
| Country of Origin | - |
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