Part Number | TC58NVG1S3HTAI0 |
---|---|
Manufacturer | Toshiba |
Quantity in stock | 346180 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | 2Gbit, generation: 24nm, VCC=2.7 to 3.6V |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | TC58NVG1S3HTAI0 |
Datasheet download | ![]() |
Part Number | TC58NVG1S3HTAI0 |
---|---|
Page Size | 2 KB |
Rad Hard | No |
Maximum Erase Time | 0.0035 s |
Operating Temperature | -40 to 85 °C |
Typical Operating Supply Voltage | 3.3 V |
Architecture | Sectored |
Simultaneous Read/Write Support | No |
Supplier Package | TSOP-I |
Block Organization | Symmetrical |
Mounting | Surface Mount |
Sector Size | 128 x 2048 KB |
Maximum Programming Time | 0.3 ms |
Product Dimensions | 18.4 x 12 x 1 |
Maximum Random Access Time | 25000 ns |
Density | 2 Gb |
Minimum Operating Supply Voltage | 2.7 V |
Number of Words | 256 kWords |
Number of Bits per Word | 8 Bit |
Programming Voltage | 2.7 to 3.6 V |
Screening Level | Industrial |
ECC Support | Yes |
Pin Count | 48 |
Maximum Operating Supply Voltage | 3.6 V |
Cell Type | SLC NAND |
Package | 48TSOP-I |
Replacement Part Number | PART-TC58NVG1S3HTAI0 |
Weight | Contact us |
Country of Origin | - |
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