2SB1216S-E ON Semiconductor

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Part Number 2SB1216S-E
Manufacturer ON Semiconductor
Quantity in stock 655530 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level 2SB1216S-E
Datasheet download 2SB1216S-E.pdf
Request Quotation for 2SB1216S-E

2SB1216S-E Specifications

Part Number 2SB1216S-E
Mounting Through Hole
Maximum Power Dissipation 1000 mW
Minimum DC Current Gain [email protected]@5V
Supplier Package TP
Product Dimensions 6.5 x 2.3 x 5.5 mm
Maximum Base Emitter Saturation Voltage [email protected]@2A V
Maximum DC Collector Current 4 A
Type PNP
Operating Temperature -55 to 150 °C
Pin Count 3
Rad Hard No
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage [email protected]@2A V
Maximum Collector Emitter Voltage 100 V
Maximum Emitter Base Voltage 6 V
Package 3TP
Replacement Part Number PART-2SB1216S-E
Weight Contact us
Country of Origin -

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