Part Number | 2SB1216S-E |
---|---|
Manufacturer | ON Semiconductor |
Quantity in stock | 655530 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | 2SB1216S-E |
Datasheet download | ![]() |
Part Number | 2SB1216S-E |
---|---|
Mounting | Through Hole |
Maximum Power Dissipation | 1000 mW |
Minimum DC Current Gain | [email protected]@5V |
Supplier Package | TP |
Product Dimensions | 6.5 x 2.3 x 5.5 mm |
Maximum Base Emitter Saturation Voltage | [email protected]@2A V |
Maximum DC Collector Current | 4 A |
Type | PNP |
Operating Temperature | -55 to 150 °C |
Pin Count | 3 |
Rad Hard | No |
Maximum Collector Base Voltage | 120 V |
Maximum Collector Emitter Saturation Voltage | [email protected]@2A V |
Maximum Collector Emitter Voltage | 100 V |
Maximum Emitter Base Voltage | 6 V |
Package | 3TP |
Replacement Part Number | PART-2SB1216S-E |
Weight | Contact us |
Country of Origin | - |
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