2SA1162GRTE85L,F Toshiba

2SA1162GRTE85L,F Images

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Part Number 2SA1162GRTE85L,F
Manufacturer Toshiba
Quantity in stock 757260 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level 2SA1162GRTE85L,F
Datasheet download 2SA1162GRTE85L,F.pdf
Request Quotation for 2SA1162GRTE85L,F

2SA1162GRTE85L,F Specifications

Part Number 2SA1162GRTE85L,F
Rad Hard No
Maximum Power Dissipation 150 mW
Mounting Surface Mount
Lead Finish Tin|Tin/Silver/Copper
Pin Count 3
Maximum DC Collector Current 0.15 A
Supplier Package S-Mini
Operating Temperature -55 to 125 °C
Product Dimensions 2.9 x 1.5 x 1.1 mm
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Voltage 50 V
Max Processing Temp 260
Maximum Emitter Base Voltage 5 V
Type PNP
Maximum Collector Emitter Saturation Voltage 0.3@10mA@100mA V
Minimum DC Current Gain 200@2mA@6V
Package 3S-Mini
Replacement Part Number PART-2SA1162GRTE85L,F
Weight Contact us
Country of Origin -

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