LQH32CN470K53L

Ind Power Chip Unshielded Wirewound 47uH 10% 1MHz Ferrite 170mA 1210 Embossed T R

LQH32PN2R2NN0L

Ind Power Chip Shielded Wirewound 2.2uH 30% 1MHz Ferrite 1.6A 1210 Embossed T R

LQM31PN4R7M00L

Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 700mA 1206 Embossed T R

LQG18HN33NJ00D

Ind RF Chip Multi-Layer 33nH 5% 100MHz 12Q-Factor Air 300mA 0603 Paper T R

DFE201210S-1R0M=P2

IND, SM 1.0UH 2012-10 + -20% 3.2A NG.

LQG18HH33NJ00D

Ind RF Chip Multi-layer 33nH 5% 100MHz 12Q-Factor 500mA 0603 Paper T R

LQG15HS4N7S02D

Ind RF Chip Multi-Layer 4.7nH 0.3nH 100MHz 8Q-Factor Air 300mA 0402 Paper T R

LQH31CN100K03L

Ind Power Chip Unshielded Wirewound 10uH 10% 1MHz Ferrite 230mA 1206 Embossed T R

LQW15AN10NG80D

Ind RF Chip Wirewound

LQM18PN3R3MFRL

Ind Power Chip Shielded Multi-Layer 3.3uH 20% 1MHz Ferrite 700mA 0603 Embossed T R

LQG15HN10NJ02D

Ind RF Chip Multi-Layer 10nH 5% 100MHz 8Q-Factor Air 300mA 0402 Paper T R

LQG15HN15NJ02D

Ind RF Chip Multi-Layer 15nH 5% 100MHz 8Q-Factor Air 300mA 0402 Paper T R

LQG15HN7N5J02D

Ind RF Chip Multi-Layer 7.5nH 5% 100MHz 8Q-Factor Air 300mA 0402 Paper T R

BLM15BB100SN1D

Ind Chip Bead 10Ohm 25% 100MHz Ferrite 300mA 0402 Paper T R

LQG15HS56NJ02D

Ind RF Chip Multi-Layer 56nH 5% 100MHz 8Q-Factor Air 200mA 0402 Paper T R

1239AS-H-100M=P2

Ind Power Shielded 10uH 20% 1MHz Metal 850mA 1008 T R

LQG15HS1N8S02D

Ind RF Chip Multi-Layer 1.8nH 0.3nH 100MHz 8Q-Factor Air 300mA 0402 Paper T R

LQG18HH22NJ00D

Ind RF Chip Multi-Layer

LQG15HS12NJ02D

Ind RF Chip Multi-Layer 12nH 5% 100MHz 8Q-Factor Air 300mA 0402 Paper T R

LQW15AN15NJ00D

Ind RF Chip Wirewound 15nH 5% 100MHz 30Q-Factor 460mA 0402 Paper T R