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| Part Number | TH58NYG3S0HBAI4 |
|---|---|
| Manufacturer | Toshiba |
| Quantity in stock | 318470 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | 8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V |
| Category | Memory IC |
| Family | Flash IC |
| ROHS Compliant | Yes |
| MSL Level | TH58NYG3S0HBAI4 |
| Datasheet download |  TH58NYG3S0HBAI4.pdf |
| Part Number | TH58NYG3S0HBAI4 |
|---|---|
| Sector Size | 256 x 4096 KB |
| Number of Bits per Word | 8 Bit |
| Erase Suspend/Resume Modes Support | No |
| Supplier Package | TFBGA |
| Rad Hard | No |
| Minimum Operating Supply Voltage | 1.7 V |
| Interface Type | Serial |
| Operating Temperature | -40 to 85 °C |
| Maximum Programming Time | 0.7/Page ms |
| Maximum Operating Current | 30 mA |
| Block Organization | Symmetrical |
| Maximum Processing Temperature | 260 °C |
| Simultaneous Read/Write Support | No |
| Page Size | 4352 byte |
| Page Read Current | 30 mA |
| Timing Type | Asynchronous |
| Support of Common Flash Interface | No |
| Typical Operating Supply Voltage | 1.8 V |
| Support of Page Mode | No |
| Mounting | Surface Mount |
| Number of Words | 1 G |
| Program Current | 30 mA |
| Architecture | Sectored |
| Cell Type | NAND |
| Pin Count | 63 |
| Boot Block | No |
| Density | 8 Gb |
| Maximum Operating Supply Voltage | 1.95 V |
| Maximum Erase Time | 0.01/Block s |
| Command Compatible | No |
| Screening Level | Industrial |
| Package Dimensions | 11 x 9 x 0.7 mm |
| ECC Support | Yes |
| Package | 63TFBGA |
| Replacement Part Number | PART-TH58NYG3S0HBAI4 |
| Weight | Contact us |
| Country of Origin | - |
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