GT50JR22(STA1,E,S) Toshiba

GT50JR22(STA1,E,S) Images

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Part Number GT50JR22(STA1,E,S)
Manufacturer Toshiba
Quantity in stock 316210 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description TOSGT50JR22(STA1,E,S) IGBT FOR SOFT SWIT
Category Discrete Semiconductor
Family IGBT Chip
ROHS Compliant Yes
MSL Level GT50JR22(STA1,E,S)
Datasheet download GT50JR22(STA1,E,S).pdf
Request Quotation for GT50JR22(STA1,E,S)

GT50JR22(STA1,E,S) Specifications

Part Number GT50JR22(STA1,E,S)
Maximum Gate Emitter Voltage ±25 V
Packaging Bulk
Rad Hard No
Maximum Continuous Collector Current 50 A
Configuration Single
Operating Temperature -55 to 175 °C
Maximum Collector Emitter Voltage 600 V
Lead Free Yes
Mounting Through Hole
Family GT50JR22
Channel Type N
Package 3TO-3P
Replacement Part Number PART-GT50JR22(STA1,E,S)
Weight Contact us
Country of Origin -

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