Si4666DY-T1-GE3 Vishay

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Part Number Si4666DY-T1-GE3
Manufacturer Vishay
Quantity in stock 670210 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans MOSFET N-CH 25V 11.5A 8-Pin SOIC N T R
Category Discrete Semiconductor
Family Transistor
ROHS Compliant Yes
MSL Level Si4666DY-T1-GE3
Datasheet download Si4666DY-T1-GE3.pdf
Request Quotation for Si4666DY-T1-GE3

Si4666DY-T1-GE3 Specifications

Part Number Si4666DY-T1-GE3
RDS-on 10@10V mOhm
Lead Finish Matte Tin
Rad Hard No
MSL Level 1
Maximum Drain Source Voltage 25 V
Typical Rise Time 12 ns
Maximum Continuous Drain Current 11.5 A
Operating Temperature -55 to 150 °C
Pin Count 8
Mounting Surface Mount
Maximum Gate Source Voltage ±12 V
Channel Type N
Channel Mode Enhancement
Typical Fall Time 10 ns
Typical Turn-Off Delay Time 27 ns
Product Dimensions 5 x 4 x 1.55 mm
Typical Turn-On Delay Time 13 ns
Supplier Package SOIC N
Max Processing Temp 260
Package 8SOIC N
Replacement Part Number PART-Si4666DY-T1-GE3
Weight Contact us
Country of Origin -

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