Part Number | IPN60R2K1CEATMA1 |
---|---|
Manufacturer | Infineon |
Quantity in stock | 881880 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans MOSFET N 650V 3.7A 3-Pin SOT-223 T R |
Category | Discrete Semiconductor |
Family | Transistor |
ROHS Compliant | Yes |
MSL Level | IPN60R2K1CEATMA1 |
Datasheet download | IPN60R2K1CEATMA1.pdf |
Part Number | IPN60R2K1CEATMA1 |
---|---|
Mounting | Surface Mount |
Rad Hard | No |
Channel Mode | Enhancement |
Maximum Drain Source Voltage | 650 V |
Maximum Processing Temperature | 260 °C |
Moisture Sensitivity Level | 1 |
Pin Count | 3 |
Maximum Continuous Drain Current | 3.7 A |
Package Dimensions | 6.7 x 3.7 x 1.7 mm |
Channel Type | N |
Typical Rise Time | 7 ns |
Operating Temperature | -40 to 150 °C |
Typical Turn-Off Delay Time | 30 ns |
Supplier Package | SOT-223 |
RDS-on | 2.1@10V Ohm |
Lead Finish | Matte Tin |
Maximum Gate Source Voltage | 20 V |
Typical Fall Time | 50 ns |
Typical Turn-On Delay Time | 7 ns |
Package | 3SOT-223 |
Replacement Part Number | PART-IPN60R2K1CEATMA1 |
Weight | Contact us |
Country of Origin | - |
Image | Part Number and Brand | Brief Description and PDF Datasheet |
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Vishay | VIS5191-45794-04-00 GTO 6250-0,22 R_A - |
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