Part Number | M29W640GL70NB6E |
---|---|
Manufacturer | Micron |
Quantity in stock | 531610 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | NOR Flash Parallel 3V 3.3V 64Mbit 8M 4M x 8bit 16bit 70ns 56-Pin TSOP Tray |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | M29W640GL70NB6E |
Datasheet download | M29W640GL70NB6E.pdf |
Part Number | M29W640GL70NB6E |
---|---|
Address Bus Width | 23|22 Bit |
Sector Size | 64 x 128 KB |
Density | 64 Mb |
Supplier Package | TSOP |
Programming Voltage | 2.7 to 3.6|11.5 to 12.5 V |
Erase Suspend/Resume Modes Support | Yes |
Simultaneous Read/Write Support | No |
Block Organization | Symmetrical |
Command Compatible | No |
Support of Page Mode | Yes |
Architecture | Sectored |
Cell Type | NOR |
Interface Type | Parallel |
Timing Type | Asynchronous |
ECC Support | No |
OE Access Time | 30 ns |
Maximum Operating Current | 10 mA |
Number of Bits per Word | 8/16 Bit |
Boot Block | No |
Minimum Operating Supply Voltage | 2.7 V |
Maximum Operating Supply Voltage | 3.6 V |
Mounting | Surface Mount |
Screening Level | Industrial |
Rad Hard | No |
Operating Temperature | -40 to 85 °C |
Max Processing Temp | 260 |
Pin Count | 56 |
Lead Finish | Matte Tin |
Page Size | 4 Words |
Maximum Erase Time | 400/Chip s |
Maximum Programming Time | 400000/Chip ms |
Maximum Page Access Time | 30 ns |
Number of Words | 8 MWords |
Product Dimensions | 14 x 18.4 x 1 mm |
Maximum Random Access Time | 70 ns |
Program Current | 20 mA |
Typical Operating Supply Voltage | 3|3.3 V |
Package | 56TSOP |
Replacement Part Number | PART-M29W640GL70NB6E |
Weight | Contact us |
Country of Origin | - |
Image | Part Number and Brand | Brief Description and PDF Datasheet |
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Micron | MASSFLASH LPDDR2 3G - |
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