Part Number | M29DW323DB70N6E |
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Manufacturer | Micron |
Quantity in stock | 860550 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | NOR Flash Parallel 3V 3.3V 32Mbit 4M 2M x 8bit 16bit 70ns 48-Pin TSOP Tray |
Category | Memory IC |
Family | Flash IC |
ROHS Compliant | Yes |
MSL Level | M29DW323DB70N6E |
Datasheet download | M29DW323DB70N6E.pdf |
Part Number | M29DW323DB70N6E |
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Product Dimensions | 12 x 18.4 x 1 mm |
Erase Suspend/Resume Modes Support | Yes |
Address Bus Width | 22|21 Bit |
Maximum Random Access Time | 70 ns |
Rad Hard | No |
Operating Temperature | -40 to 85 °C |
Block Organization | Asymmetrical |
Density | 32 Mb |
Cell Type | NOR |
Architecture | Sectored |
Maximum Programming Time | 200000/Chip ms |
Boot Block | Yes |
Bank Size | 8/24 Mb |
Maximum Operating Current | 10 mA |
Interface Type | Parallel |
Location Of Boot Block | Bottom |
OE Access Time | 30 ns |
Max Processing Temp | 260 |
Mounting | Surface Mount |
Simultaneous Read/Write Support | No |
Lead Finish | Matte Tin |
Screening Level | Automotive |
Pin Count | 48 |
Number of Bits per Word | 8/16 Bit |
Supplier Package | TSOP |
Minimum Operating Supply Voltage | 2.7 V |
Support of Common Flash Interface | Yes |
Sector Size | 8 x 8|64 x 63 KB |
Maximum Operating Supply Voltage | 3.6 V |
Command Compatible | Yes |
Maximum Erase Time | 200/Chip s |
Support of Page Mode | No |
Typical Operating Supply Voltage | 3|3.3 V |
Program Current | 20 mA |
Timing Type | Asynchronous |
Number of Words | 2 MWords |
ECC Support | No |
Programming Voltage | 2.7 to 3.6|11.5 to 12.5 V |
Package | 48TSOP |
Replacement Part Number | PART-M29DW323DB70N6E |
Weight | Contact us |
Country of Origin | - |
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