Part Number | 71V416S10YG |
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Manufacturer | Integrated Device Technology |
Quantity in stock | 825840 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout |
Category | Memory IC |
Family | SRAM Chip |
ROHS Compliant | Yes |
MSL Level | 71V416S10YG |
Datasheet download | ![]() |
Part Number | 71V416S10YG |
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Maximum Operating Current | 200 mA |
Moisture Sensitivity Level | 3 |
Operating Temperature | 0 to 70 °C |
Rad Hard | No |
Typical Operating Supply Voltage | 3.3 V |
Maximum Random Access Time | 10 ns |
Pitch | 1.27 |
Number of I/O Lines | 16 Bit |
Address Bus Width | 18 Bit |
Density | 4 Mb |
Mounting | Surface Mount |
Max Processing Temp | 260 |
MSL Level | 3 |
Lead Finish | Matte Tin |
Screening Level | Commercial |
Number of Bits per Word | 16 Bit |
Timing Type | Asynchronous |
Supplier Package | SOJ |
Product Dimensions | 28.6 x 10.2 x 2.18 mm |
Number of Words | 256 kWords |
Pin Count | 44 |
Maximum Operating Supply Voltage | 3.6 V |
Number of Ports | 1 |
Minimum Operating Supply Voltage | 3 V |
Package | 44SOJ |
Replacement Part Number | PART-71V416S10YG |
Weight | Contact us |
Country of Origin | - |
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