SMMBT5551LT1G ON Semiconductor

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Part Number SMMBT5551LT1G
Manufacturer ON Semiconductor
Quantity in stock 416610 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT NPN 160V 0.06A 3-Pin SOT-23 T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level SMMBT5551LT1G
Datasheet download SMMBT5551LT1G.pdf
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SMMBT5551LT1G Specifications

Part Number SMMBT5551LT1G
Product Dimensions 2.9 x 1.3 x 0.94 mm
Type NPN
Rad Hard No
Operating Temperature -55 to 150 °C
Maximum Emitter Base Voltage 6 V
Maximum Power Dissipation 300 mW
Lead Finish Matte Tin
Maximum Collector Base Voltage 180 V
Mounting Surface Mount
Maximum Base Emitter Saturation Voltage 1@1mA@10mA|1@5mA@50mA V
Maximum DC Collector Current 0.06 A
Supplier Package SOT-23
Minimum DC Current Gain 80@1mA@5V|80@10mA@5V|30@50mA@5V
MSL Level 1
Maximum Collector Emitter Saturation Voltage 0.15@1mA@10mA|0.2@5mA@50mA V
Pin Count 3
Screening Level Automotive
Maximum Collector Emitter Voltage 160 V
Package 3SOT-23
Replacement Part Number PART-SMMBT5551LT1G
Weight Contact us
Country of Origin -

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