Part Number | PBSS8110T,215 |
---|---|
Manufacturer | Nexperia |
Quantity in stock | 627640 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT NPN 100V 1A 3-Pin TO-236AB T R |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | PBSS8110T,215 |
Datasheet download | ![]() |
Part Number | PBSS8110T,215 |
---|---|
Maximum Base Emitter Saturation Voltage | 1.05@100mA@1A V |
Rad Hard | No |
Minimum DC Current Gain | 150@1mA@10V|150@250mA@10V|[email protected]@10V|80@1A@10V |
Lead Finish | Tin |
Pin Count | 3 |
Operating Temperature | -65 to 150 °C |
Type | NPN |
Supplier Package | TO-236AB |
Product Dimensions | 3 x 1.4 x 1 mm |
Maximum Collector Emitter Saturation Voltage | 0.04@10mA@100mA|0.12@50mA@500mA|0.2@100mA@1A V |
Maximum Collector Emitter Voltage | 100 V |
Maximum Power Dissipation | 480 mW |
Maximum Emitter Base Voltage | 5 V |
Max Processing Temp | 260 |
MSL Level | 1 |
Maximum Collector Base Voltage | 120 V |
Maximum DC Collector Current | 1 A |
Mounting | Surface Mount |
Package | 3TO-236AB |
Replacement Part Number | PART-PBSS8110T,215 |
Weight | Contact us |
Country of Origin | - |