Part Number | PBSS4160QAZ |
---|---|
Manufacturer | Nexperia |
Quantity in stock | 218280 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT NPN 60V 1A 3-Pin DFN |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | PBSS4160QAZ |
Datasheet download | ![]() |
Part Number | PBSS4160QAZ |
---|---|
Rad Hard | No |
Maximum Collector Emitter Saturation Voltage | 0.125@50mA@500mA|0.245@50mA@1A|0.235@100mA@1A V |
Mounting | Surface Mount |
Maximum DC Collector Current | 1 A |
Maximum Emitter Base Voltage | 7 V |
MSL Level | 1 |
Lead Finish | Tin |
Max Processing Temp | 260 |
Pin Count | 3 |
Maximum Collector Base Voltage | 60 V |
Type | NPN |
Maximum Transition Frequency | 180 MHz |
Maximum Base Emitter Saturation Voltage | 1@50mA@500mA|1.05@50mA@1A|1.1@100mA@1A V |
Screening Level | Automotive |
Operating Temperature | -55 to 150 °C |
Minimum DC Current Gain | 230@100mA@2V|150@500mA@2V|85@1A@2V |
Product Dimensions | 1.1 x 1 x 0.36(Max) |
Supplier Package | DFN |
Maximum Collector Emitter Voltage | 60 V |
Maximum Power Dissipation | 1000 mW |
Package | 3DFN |
Replacement Part Number | PART-PBSS4160QAZ |
Weight | Contact us |
Country of Origin | - |
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