NSS20101JT1G ON Semiconductor

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Part Number	NSS20101JT1G
Manufacturer	ON Semiconductor
Quantity in stock	376880 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT NPN 20V 2A 3-Pin SC-89 T R
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	NSS20101JT1G
Datasheet download	NSS20101JT1G.pdf

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NSS20101JT1G Specifications

Part Number	NSS20101JT1G
Maximum Emitter Base Voltage	6 V
Operating Temperature	-55 to 150 °C
Rad Hard	No
Type	NPN
Max Processing Temp	260
Maximum Power Dissipation	300 mW
Supplier Package	SC-89
Lead Finish	Matte Tin
Maximum Collector Emitter Voltage	20 V
Mounting	Surface Mount
Product Dimensions	1.6 x 0.85 x 0.7 mm
Maximum DC Collector Current	2 A
Maximum Base Emitter Saturation Voltage	1.1@[email protected] V
MSL Level	1
Pin Count	3
Minimum DC Current Gain	200@10m@2V\|200@100mA@2V\|150@500mA@2V\|100@1A@2V
Maximum Collector Emitter Saturation Voltage	[email protected]@10mA\|[email protected]@0.1A\|[email protected]@0.5A\|[email protected]@1A V
Maximum Collector Base Voltage	40 V
Package	3SC-89
Replacement Part Number	PART-NSS20101JT1G
Weight	Contact us
Country of Origin	-

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