NSS20101JT1G ON Semiconductor

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Part Number NSS20101JT1G
Manufacturer ON Semiconductor
Quantity in stock 376880 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT NPN 20V 2A 3-Pin SC-89 T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level NSS20101JT1G
Datasheet download NSS20101JT1G.pdf
Request Quotation for NSS20101JT1G

NSS20101JT1G Specifications

Part Number NSS20101JT1G
Maximum Emitter Base Voltage 6 V
Operating Temperature -55 to 150 °C
Rad Hard No
Type NPN
Max Processing Temp 260
Maximum Power Dissipation 300 mW
Supplier Package SC-89
Lead Finish Matte Tin
Maximum Collector Emitter Voltage 20 V
Mounting Surface Mount
Product Dimensions 1.6 x 0.85 x 0.7 mm
Maximum DC Collector Current 2 A
Maximum Base Emitter Saturation Voltage 1.1@[email protected] V
MSL Level 1
Pin Count 3
Minimum DC Current Gain 200@10m@2V|200@100mA@2V|150@500mA@2V|100@1A@2V
Maximum Collector Emitter Saturation Voltage [email protected]@10mA|[email protected]@0.1A|[email protected]@0.5A|[email protected]@1A V
Maximum Collector Base Voltage 40 V
Package 3SC-89
Replacement Part Number PART-NSS20101JT1G
Weight Contact us
Country of Origin -

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