NSS12501UW3T2G ON Semiconductor

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Part Number	NSS12501UW3T2G
Manufacturer	ON Semiconductor
Quantity in stock	796880 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT NPN 12V 5A 3-Pin WDFN T R
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	NSS12501UW3T2G
Datasheet download	NSS12501UW3T2G.pdf

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NSS12501UW3T2G Specifications

Part Number	NSS12501UW3T2G
Rad Hard	No
Max Processing Temp	260
Operating Temperature	-55 to 150 °C
Type	NPN
Maximum Emitter Base Voltage	6 V
Supplier Package	WDFN
Maximum DC Collector Current	5 A
Lead Finish	Matte Tin
Mounting	Surface Mount
Maximum Base Emitter Saturation Voltage	[email protected]@1A V
Maximum Power Dissipation	1500 mW
Minimum DC Current Gain	200@10mA@2V\|200@500mA@2V\|200@1A@2V\|200@2A@2V
Product Dimensions	2 x 2 x 0.75 mm
MSL Level	1
Maximum Collector Emitter Voltage	12 V
Maximum Collector Emitter Saturation Voltage	[email protected]@0.1A\|[email protected]@1A\|[email protected]@1A\|[email protected]@2A\|[email protected]@3A\|[email protected]@4A V
Maximum Collector Base Voltage	12 V
Pin Count	3
Package	3WDFN
Replacement Part Number	PART-NSS12501UW3T2G
Weight	Contact us
Country of Origin	-

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