NJVMJD253T4G ON Semiconductor

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Part Number	NJVMJD253T4G
Manufacturer	ON Semiconductor
Quantity in stock	852230 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT PNP 100V 4A 3-Pin 3DPAK T R
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	NJVMJD253T4G
Datasheet download	NJVMJD253T4G.pdf

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NJVMJD253T4G Specifications

Part Number	NJVMJD253T4G
Maximum Collector Base Voltage	100 V
Maximum Base Emitter Saturation Voltage	1.8@200mA@2A V
Moisture Sensitivity Level	1
Operating Temperature	-65 to 150 °C
Lead Finish	Pure Tin
Maximum Transition Frequency	40(Min) MHz
Maximum Emitter Base Voltage	7 V
Pin Count	3
Rad Hard	No
Type	PNP
Maximum Collector Emitter Saturation Voltage	0.6@100mA@1A\|0.3@50mA@500mA V
Maximum Power Dissipation	1400 mW
Package Dimensions	6.73 x 6.22 x 2.38 mm
Mounting	Surface Mount
Maximum DC Collector Current	4 A
Maximum Processing Temperature	260 °C
Maximum Collector Emitter Voltage	100 V
Supplier Package	DPAK
Screening Level	Automotive
Minimum DC Current Gain	40@200mA@1V\|15@1000mA@1V
Package	3DPAK
Replacement Part Number	PART-NJVMJD253T4G
Weight	Contact us
Country of Origin	-

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