Part Number | NJVMJD253T4G |
---|---|
Manufacturer | ON Semiconductor |
Quantity in stock | 852230 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT PNP 100V 4A 3-Pin 3DPAK T R |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | NJVMJD253T4G |
Datasheet download | ![]() |
Part Number | NJVMJD253T4G |
---|---|
Maximum Collector Base Voltage | 100 V |
Maximum Base Emitter Saturation Voltage | 1.8@200mA@2A V |
Moisture Sensitivity Level | 1 |
Operating Temperature | -65 to 150 °C |
Lead Finish | Pure Tin |
Maximum Transition Frequency | 40(Min) MHz |
Maximum Emitter Base Voltage | 7 V |
Pin Count | 3 |
Rad Hard | No |
Type | PNP |
Maximum Collector Emitter Saturation Voltage | 0.6@100mA@1A|0.3@50mA@500mA V |
Maximum Power Dissipation | 1400 mW |
Package Dimensions | 6.73 x 6.22 x 2.38 mm |
Mounting | Surface Mount |
Maximum DC Collector Current | 4 A |
Maximum Processing Temperature | 260 °C |
Maximum Collector Emitter Voltage | 100 V |
Supplier Package | DPAK |
Screening Level | Automotive |
Minimum DC Current Gain | 40@200mA@1V|15@1000mA@1V |
Package | 3DPAK |
Replacement Part Number | PART-NJVMJD253T4G |
Weight | Contact us |
Country of Origin | - |