MJD45H11-1G ON Semiconductor

MJD45H11-1G Images

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Part Number MJD45H11-1G
Manufacturer ON Semiconductor
Quantity in stock 882320 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level MJD45H11-1G
Datasheet download MJD45H11-1G.pdf
Request Quotation for MJD45H11-1G

MJD45H11-1G Specifications

Part Number MJD45H11-1G
Minimum DC Current Gain 60@2A@1V|40@4A@1V
Maximum Collector Emitter Saturation Voltage [email protected]@8A V
Maximum Transition Frequency 90 MHz
Supplier Package IPAK
Max Processing Temp 260
Operating Temperature -55 to 150 °C
Maximum Collector Emitter Voltage 80 V
Maximum Emitter Base Voltage 5 V
Rad Hard No
Maximum Base Emitter Saturation Voltage [email protected]@8A V
Lead Finish Matte Tin
Maximum Power Dissipation 1750 mW
Product Dimensions 6.73 x 2.38 x 6.35 mm
Mounting Through Hole
MSL Level 1
Maximum DC Collector Current 8 A
Pin Count 3
Type PNP
Package 3IPAK
Replacement Part Number PART-MJD45H11-1G
Weight Contact us
Country of Origin -

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