HN1A07F(TE85L.F) Toshiba

HN1A07F(TE85L.F) Images

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Part Number HN1A07F(TE85L.F)
Manufacturer Toshiba
Quantity in stock 350340 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 50V 0.5A 6-Pin SOT-26 Embossed T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level HN1A07F(TE85L.F)
Datasheet download HN1A07F(TE85L.F).pdf
Request Quotation for HN1A07F(TE85L.F)

HN1A07F(TE85L.F) Specifications

Part Number HN1A07F(TE85L.F)
Maximum Collector Emitter Saturation Voltage 0.25@10mA@100mA V
Maximum DC Collector Current 0.5 A
Mounting Surface Mount
Lead Finish Tin|Silver
Type PNP
Product Dimensions 2.9 x 1.6 x 1.1
Maximum Collector Base Voltage 50 V
Pin Count 6
MSL Level 1
Supplier Package SOT-26
Maximum Collector Emitter Voltage 50 V
Minimum DC Current Gain 70@100mA@1V|25@400mA@1V
Maximum Transition Frequency 200 MHz
Rad Hard No
Maximum Emitter Base Voltage 5 V
Operating Temperature -55 to 150 °C
Max Processing Temp 260
Maximum Power Dissipation 300 mW
Package 6SOT-26
Replacement Part Number PART-HN1A07F(TE85L.F)
Weight Contact us
Country of Origin -

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