Part Number | HN1A07F(TE85L.F) |
---|---|
Manufacturer | Toshiba |
Quantity in stock | 350340 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT PNP 50V 0.5A 6-Pin SOT-26 Embossed T R |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | HN1A07F(TE85L.F) |
Datasheet download | HN1A07F(TE85L.F).pdf |
Part Number | HN1A07F(TE85L.F) |
---|---|
Maximum Collector Emitter Saturation Voltage | 0.25@10mA@100mA V |
Maximum DC Collector Current | 0.5 A |
Mounting | Surface Mount |
Lead Finish | Tin|Silver |
Type | PNP |
Product Dimensions | 2.9 x 1.6 x 1.1 |
Maximum Collector Base Voltage | 50 V |
Pin Count | 6 |
MSL Level | 1 |
Supplier Package | SOT-26 |
Maximum Collector Emitter Voltage | 50 V |
Minimum DC Current Gain | 70@100mA@1V|25@400mA@1V |
Maximum Transition Frequency | 200 MHz |
Rad Hard | No |
Maximum Emitter Base Voltage | 5 V |
Operating Temperature | -55 to 150 °C |
Max Processing Temp | 260 |
Maximum Power Dissipation | 300 mW |
Package | 6SOT-26 |
Replacement Part Number | PART-HN1A07F(TE85L.F) |
Weight | Contact us |
Country of Origin | - |
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