Part Number | BC856BS DG B2,115 |
---|---|
Manufacturer | NXP |
Quantity in stock | 857800 Pieces |
Market Price | - |
Our Better Price | Send by email: [email protected] |
Delivery Time | 1 day (can ship today) |
Description | Trans GP BJT PNP 65V 0.1A 6-Pin TSSOP T R |
Category | Discrete Semiconductor |
Family | Bipolar Transistor |
ROHS Compliant | Yes |
MSL Level | BC856BS DG B2,115 |
Datasheet download | BC856BS DG B2,115.pdf |
Part Number | BC856BS DG B2,115 |
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Maximum Transition Frequency | 100 MHz |
Package Dimensions | 2 x 1.25 x 0.95 mm |
Maximum Emitter Base Voltage | 6 V |
Screening Level | Automotive |
Minimum DC Current Gain | 200@2mA@5V |
Maximum Power Dissipation | 300 mW |
Maximum DC Collector Current | 0.1 A |
Maximum Collector Emitter Saturation Voltage | [email protected]@10mA|0.3@5mA@100mA V |
Maximum Base Emitter Saturation Voltage | [email protected]@10mA V |
Operating Temperature | -55 to 150 °C |
Maximum Collector Emitter Voltage | 65 V |
Rad Hard | No |
Mounting | Surface Mount |
Supplier Package | TSSOP |
Lead Finish | Tin |
Type | PNP |
Maximum Processing Temperature | 260 °C |
Moisture Sensitivity Level | 1 |
Pin Count | 6 |
Maximum Collector Base Voltage | 80 V |
Package | 6TSSOP |
Replacement Part Number | PART-BC856BS DG B2,115 |
Weight | Contact us |
Country of Origin | - |
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