2SC5551AE-TD-E ON Semiconductor

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Part Number	2SC5551AE-TD-E
Manufacturer	ON Semiconductor
Quantity in stock	499210 Pieces
Market Price	-
Our Better Price	Send by email: [email protected]
Delivery Time	1 day (can ship today)
Description	Trans GP BJT NPN 30V 0.3A 4-Pin(3+Tab) PCP
Category	Discrete Semiconductor
Family	Bipolar Transistor
ROHS Compliant	Yes
MSL Level	2SC5551AE-TD-E
Datasheet download	2SC5551AE-TD-E.pdf

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2SC5551AE-TD-E Specifications

Part Number	2SC5551AE-TD-E
Pin Count	4
Mounting	Surface Mount
Supplier Package	PCP
Minimum DC Current Gain	90@50mA@5V
Maximum Collector Base Voltage	40 V
Maximum Base Emitter Saturation Voltage	1.2@5mA@50mA V
Maximum Collector Emitter Voltage	30 V
Product Dimensions	4.5 x 2.5 x 1.5 mm
Maximum Power Dissipation	1300 mW
Maximum DC Collector Current	0.3 A
Maximum Emitter Base Voltage	2 V
Rad Hard	No
Type	NPN
Operating Temperature	-55 to 150 °C
Maximum Collector Emitter Saturation Voltage	0.3@5mA@50mA V
Package	4PCP
Replacement Part Number	PART-2SC5551AE-TD-E
Weight	Contact us
Country of Origin	-

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