2SC3649T-TD-E ON Semiconductor

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Part Number 2SC3649T-TD-E
Manufacturer ON Semiconductor
Quantity in stock 269200 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT NPN 160V 1.5A 4-Pin(3+Tab) PCP T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level 2SC3649T-TD-E
Datasheet download 2SC3649T-TD-E.pdf
Request Quotation for 2SC3649T-TD-E

2SC3649T-TD-E Specifications

Part Number 2SC3649T-TD-E
Lead Finish Matte Tin
Maximum Collector Base Voltage 180 V
Pin Count 4
Mounting Surface Mount
MSL Level 1
Maximum Power Dissipation 500 mW
Minimum DC Current Gain 200@100mA@5V
Maximum Base Emitter Saturation Voltage 1.2@50mA@500mA V
Maximum Collector Emitter Voltage 160 V
Supplier Package PCP
Maximum Collector Emitter Saturation Voltage 0.45@50mA@500mA V
Type NPN
Operating Temperature -55 to 150 °C
Rad Hard No
Max Processing Temp 260
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 6 V
Product Dimensions 4.5 x 2.5 x 1.5 mm
Package 4PCP
Replacement Part Number PART-2SC3649T-TD-E
Weight Contact us
Country of Origin -

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