2DB1182Q-13 Diodes Incorporated

2DB1182Q-13 Images

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Part Number 2DB1182Q-13
Manufacturer Diodes Incorporated
Quantity in stock 285380 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans GP BJT PNP 32V 2A 3-Pin(2+Tab) TO-252 T R
Category Discrete Semiconductor
Family Bipolar Transistor
ROHS Compliant Yes
MSL Level 2DB1182Q-13
Datasheet download 2DB1182Q-13.pdf
Request Quotation for 2DB1182Q-13

2DB1182Q-13 Specifications

Part Number 2DB1182Q-13
Maximum Collector Emitter Saturation Voltage [email protected]@2A V
Maximum Emitter Base Voltage 5 V
Type PNP
Rad Hard No
Max Processing Temp 260
Maximum Power Dissipation 10000 mW
Operating Temperature -55 to 150 °C
Minimum DC Current Gain [email protected]@3V
Product Dimensions 6.58 x 6.1 x 2.29 mm
Lead Finish Matte Tin
Supplier Package TO-252
Mounting Surface Mount
Maximum Collector Emitter Voltage 32 V
Maximum DC Collector Current 2 A
MSL Level 1
Pin Count 3
Maximum Collector Base Voltage 40 V
Package 3TO-252
Replacement Part Number PART-2DB1182Q-13
Weight Contact us
Country of Origin -

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