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| Part Number | 2DB1182Q-13 |
|---|---|
| Manufacturer | Diodes Incorporated |
| Quantity in stock | 285380 Pieces |
| Market Price | - |
| Our Better Price | Send by email: [email protected] |
| Delivery Time | 1 day (can ship today) |
| Description | Trans GP BJT PNP 32V 2A 3-Pin(2+Tab) TO-252 T R |
| Category | Discrete Semiconductor |
| Family | Bipolar Transistor |
| ROHS Compliant | Yes |
| MSL Level | 2DB1182Q-13 |
| Datasheet download |  2DB1182Q-13.pdf |
| Part Number | 2DB1182Q-13 |
|---|---|
| Maximum Collector Emitter Saturation Voltage | [email protected]@2A V |
| Maximum Emitter Base Voltage | 5 V |
| Type | PNP |
| Rad Hard | No |
| Max Processing Temp | 260 |
| Maximum Power Dissipation | 10000 mW |
| Operating Temperature | -55 to 150 °C |
| Minimum DC Current Gain | [email protected]@3V |
| Product Dimensions | 6.58 x 6.1 x 2.29 mm |
| Lead Finish | Matte Tin |
| Supplier Package | TO-252 |
| Mounting | Surface Mount |
| Maximum Collector Emitter Voltage | 32 V |
| Maximum DC Collector Current | 2 A |
| MSL Level | 1 |
| Pin Count | 3 |
| Maximum Collector Base Voltage | 40 V |
| Package | 3TO-252 |
| Replacement Part Number | PART-2DB1182Q-13 |
| Weight | Contact us |
| Country of Origin | - |
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